Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe2

Pang Shiuan Liu, Chang Hsiao Chen, Wei Ting Hsu, Chih Pin Lin, Tzu Ping Lin, Li Jen Chi, Chao Yuan Chang, Shih Chieh Wu, Wen-Hao Chang, Lain Jong Li, Tuo-Hung Hou

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

P-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 μs has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe2. Because of its excellent compatibility with mass production, the application of WSe2 UTB-PT for high-speed proximity interactive display has been proposed.

原文English
主出版物標題2014 IEEE International Electron Devices Meeting, IEDM 2014
發行者Institute of Electrical and Electronics Engineers Inc.
頁面5.7.1-5.7.4
頁數4
2015-February
版本February
ISBN(電子)9781479980017
DOIs
出版狀態Published - 15 十二月 2014
事件2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
持續時間: 15 十二月 201417 十二月 2014

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
發行者Institute of Electrical and Electronics Engineers Inc.
ISSN(列印)0163-1918

Conference

Conference2014 60th IEEE International Electron Devices Meeting, IEDM 2014
國家/地區United States
城市San Francisco
期間15/12/1417/12/14

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