Fast, highly flexible, and transparent tao_x-based environmentally robust memristors for wearable and aerospace applications

Keyphrases

• High Transparency 100%
• Highly Flexible 100%
• TaOx 100%
• Memristor 100%
• Wearable Applications 100%
• Aerospace Applications 100%
• Humidity 66%
• Memristor Device 66%
• Indium Metal 66%
• Switching Process 66%
• Non-volatile 33%
• Transmission Electron Microscopy 33%
• Order of Magnitude 33%
• Photoirradiation 33%
• High Temperature 33%
• Bending Condition 33%
• Wearable Devices 33%
• Switching Phenomenon 33%
• Ultraviolet Irradiation 33%
• Ambient Temperature 33%
• High Density 33%
• Electrical Analysis 33%
• Low Dielectric 33%
• Device Design 33%
• Data Storage 33%
• Non-volatility 33%
• Mechanical Bending 33%
• Material Analysis 33%
• Photomechanical 33%
• Gas Atmosphere 33%
• Switching Devices 33%
• High Thermal Conductivity 33%
• Switching Layer 33%
• Metal Drift 33%
• Excellent Flexibility 33%
• Insertion Layer 33%
• Switching Stability 33%
• Bond Energy 33%
• Bending Radius 33%
• Switching Fluctuation 33%
• Working Conditions 33%
• Damp Heat Test 33%
• Extreme High Temperature 33%
• Rapid Switching 33%

Engineering

• Aerospace Applications 100%
• Energy Engineering 50%
• Dielectrics 50%
• Wearable Sensor 50%
• Direct Observation 50%
• High Thermal Conductivity 50%
• Humidity Test 50%
• Bending Radius 50%
• Damp Heat 50%

Material Science

• Indium 100%
• Aluminum Nitride 100%
• Density 50%
• Transmission Electron Microscopy 50%
• Thermal Conductivity 50%
• Dielectric Material 50%