Fast and accurate programming method for multi-level NAND EEPROMs

G. J. Hemink*, T. Tanaka, T. Endoh, S. Aritome, Shirota Riichiro

*此作品的通信作者

研究成果: Conference article同行評審

71 引文 斯高帕斯(Scopus)

摘要

For the replacement of conventional harddisks by NAND EEPROMs, a very high density and a high programming speed are required. An increased density can be achieved by using multi-level memory cells. With the new method, using staircase programming pulses combined with a bit-by-bit verify, a very narrow threshold voltage distribution of 0.7V, necessary for 4-level or 2-bit operation, and a high programming speed of 300μs/page or 590ns/byte can be obtained.

原文English
頁(從 - 到)129-130
頁數2
期刊Digest of Technical Papers - Symposium on VLSI Technology
DOIs
出版狀態Published - 1 十二月 1995
事件Proceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn
持續時間: 6 六月 19958 六月 1995

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