Failure mode for p-GaN gates under forward gate stress with varying Mg concentration

S. Stoffels, B. Bakeroot, Tian-Li Wu, D. Marcon, N. E. Posthuma, S. Decoutere, A. N. Tallarico, C. Fiegna

研究成果: Conference contribution同行評審

55 引文 斯高帕斯(Scopus)

摘要

In this work we investigate the failure modes of GaN based e-mode transistors with a p-GaN gate, for which the top contact towards the p-GaN is realized with a Schottky metal. First the general performance and stability of the platform will be demonstrated, together with the time dependent dielectric breakdown (TDDB) behavior of the gate. The failure mechanism of the gate has been studied by performing constant voltage stress (CVS) measurements. This has been performed for two different process conditions with varying active Mg concentration. Main results in this paper demonstrate i. Reliable device operation for p-GaN gates with Schottky metal contacts II. TDDB degradation of the gate driven by a percolation path III. The type of percolation path is dependent on the gate processing. Results indicate the formation of a percolation path in the AlGaN barrier, which is demonstrated by experiments and further verified by modelling.

原文English
主出版物標題2017 International Reliability Physics Symposium, IRPS 2017
發行者Institute of Electrical and Electronics Engineers Inc.
頁面4B4.1-4B4.9
ISBN(電子)9781509066407
DOIs
出版狀態Published - 30 5月 2017
事件2017 International Reliability Physics Symposium, IRPS 2017 - Monterey, United States
持續時間: 2 4月 20176 4月 2017

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
ISSN(列印)1541-7026

Conference

Conference2017 International Reliability Physics Symposium, IRPS 2017
國家/地區United States
城市Monterey
期間2/04/176/04/17

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