Failure analysis on TiAl metallization process for ohmic contact on 4H-SiC pMOSFET

Keyphrases

• PMOSFET 100%
• Ohmic Contact 100%
• TiAl 100%
• Failure Analysis 100%
• 4H-SiC 100%
• Metallization Process 100%
• Silica 66%
• Poly-Si 33%
• Silicon Nitride 33%
• Plasma-enhanced Chemical Vapor Deposition (PECVD) 33%
• NMOSFET 33%
• Leakage Current 33%
• High Power 33%
• Device Fabrication 33%
• Contact Metal 33%
• Failure Mechanism 33%
• High Electron Mobility 33%
• Energy Band Gap 33%
• Ultra-high 33%
• Blocking Layer 33%
• High Thermal Conductivity 33%
• TiAl Alloy 33%
• Contact Resistivity 33%
• Contact Scheme 33%
• LPCVD Si3N4 33%
• High Temperature Applications 33%

Engineering

• Ohmic Contacts 100%
• Metallizations 100%
• Failure Analysis 100%
• Silicon Dioxide 66%
• Metal Contact 33%
• Failure Mechanism 33%
• High Thermal Conductivity 33%
• High Temperature Applications 33%
• Band Gap 33%
• Polysilicon 33%

Material Science

• Silicon Nitride 100%
• Electrical Resistivity 50%
• Low Pressure Chemical Vapor Deposition 50%
• Thermal Conductivity 50%
• Electron Mobility 50%
• Device Fabrication 50%