Failure analysis on TiAl metallization process for ohmic contact on 4H-SiC pMOSFET

Chia Lung Hung, Jung Chien Cheng, Bing Yue Tsui

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

SiC is suitable for high-power and high-temperature applications due to its' wide energy bandgap and high thermal conductivity. Most literature focus on SiC nMOSFET due to higher electron mobility than hole. In this work, we fabricated 4HSiC pMOSFET using TiAl alloy as contact metal to reduce the contact resistivity. However, ultrahigh leakage current was measured among all terminals of the pMOSFET. By comparing with different contact schemes, the failure mechanism is attributed to Al spiking into the underneath poly-Si and SiO2 during the metallization process. Using suitable blocking layer such as LPCVD Si3N4 (300 nm) or PECVD Si3N4 (100 nm) on SiO2 (200 nm) can avoid Al spiking so that conventional pattern topology and TiAl metallization process can be used on device fabrication.

原文English
主出版物標題26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728135526
DOIs
出版狀態Published - 7月 2019
事件26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019 - Hangzhou, China
持續時間: 2 7月 20195 7月 2019

出版系列

名字Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019
國家/地區China
城市Hangzhou
期間2/07/195/07/19

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