@inproceedings{30632e46b37c4d95913d6b4a886e6d1f,
title = "Failure analysis on TiAl metallization process for ohmic contact on 4H-SiC pMOSFET",
abstract = "SiC is suitable for high-power and high-temperature applications due to its' wide energy bandgap and high thermal conductivity. Most literature focus on SiC nMOSFET due to higher electron mobility than hole. In this work, we fabricated 4HSiC pMOSFET using TiAl alloy as contact metal to reduce the contact resistivity. However, ultrahigh leakage current was measured among all terminals of the pMOSFET. By comparing with different contact schemes, the failure mechanism is attributed to Al spiking into the underneath poly-Si and SiO2 during the metallization process. Using suitable blocking layer such as LPCVD Si3N4 (300 nm) or PECVD Si3N4 (100 nm) on SiO2 (200 nm) can avoid Al spiking so that conventional pattern topology and TiAl metallization process can be used on device fabrication.",
keywords = "4H-SiC pMOSFET, Al spiking, Blocking layer, Leakage current, Ohmic contact",
author = "Hung, {Chia Lung} and Cheng, {Jung Chien} and Tsui, {Bing Yue}",
year = "2019",
month = jul,
doi = "10.1109/IPFA47161.2019.8984917",
language = "English",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019",
address = "美國",
note = "26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019 ; Conference date: 02-07-2019 Through 05-07-2019",
}