@inproceedings{e9b8a3db857c49bd9c6589ec52e028e5,
title = "Failure analysis of ESD damage in a high-voltage driver IC and the effective ESD protection solution [CMOS]",
abstract = "The internal damage issue caused by ESD stress was investigated through a real case of high-voltage driver IC with separated power pins. After the HBM ESD tests applied on silicon chips of the original design, failure analysis was done with the help of OM and SEM to find out the failure spots. The results of failure analysis show that the internal damages on the interface circuit of two circuit blocks are caused due to the absence of the VDD-to-VSS power-rail ESD cell and the ESD cell of connecting different ground lines. By using the proposed effective ESD protection solution, the HBM ESD robustness of the high-voltage driver IC product can be improved to greater than 2.0kV.",
keywords = "CMOS integrated circuits, Circuit testing, Driver circuits, Electrostatic discharge, Failure analysis, Internal stresses, Joining processes, Pins, Protection, Silicon",
author = "Ming-Dou Ker and Peng, {Jeng Jie} and Jiang, {Hsin Chin}",
year = "2002",
month = jan,
day = "1",
doi = "10.1109/IPFA.2002.1025617",
language = "English",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "84--89",
editor = "Chim, {Wai Kin} and John Thong and Wilson Tan and Lee, {Kheng Chooi}",
booktitle = "Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2002",
address = "United States",
note = "9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2002 ; Conference date: 12-07-2002",
}