Fabrication of vertical ZnO nanowires on silicon (100) with epitaxial ZnO buffer layer

Seu Yi Li, Pang Lin, Chia Ying Lee, Mon Shu Ho, Tseung-Yuen Tseng*

*此作品的通信作者

研究成果: Article同行評審

26 引文 斯高帕斯(Scopus)

摘要

Vertical ZnO nanowires were successfully grown on epitaxial ZnO (002) buffer layer/Si (100) substrate. The nanowire growth process was controlled by surface morphology and orientation of the epitaxial ZnO buffer layer, which was deposited by radio-frequency (rf) sputtering. The copper catalyzed the vapor-liquid-solid growth of ZnO nanowires with diameter of ∼30 nm and length of ∼5.0 μm. The perfect wurtzite epitaxial structure (HCP structure) of the ZnO (0002) nanowires synthesized on ZnO (002) buffer layer/Si (100) substrate results in excellent optical characteristics such as strong UV emission at 380 nm with potential use in nano-optical and nano-electronic devices.

原文English
文章編號004
頁(從 - 到)968-971
頁數4
期刊Journal of Nanoscience and Nanotechnology
4
發行號8
DOIs
出版狀態Published - 1 十一月 2004

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