Fabrication of threedimensional Si quantum dot array by fusion of biotemplate and neutral beam etching

This chapter reviews damage-free neutral beam (NB) etching technology combined with a biotemplate process and reported some of recent applications to produce nanodisks (NDs)/nanowires (NWs) of various materials. It develops damage-free neutral beam oxidation (NBO) for the fabrication of ultrathin oxide films on Si and GaAs surfaces at a temperature of less than 300 C by using an energy-controlled oxygen-neutral beam. The chapter investigates the controllable range of E g and optical absorption characteristic of Si-NDs by changing the geometric parameters of Si-ND and matrix material, and discusses the mechanism of band gap energy by comparing the experimental result with the simulation result. It measures optical absorption coefficient in three-dimensional (3D) array of Si-NDs to investigate the effect of 3D mini-band formation on the optical absorption. Furthermore, a fabrication process with a high degree of control is also required for different quantum dots (QD) materials in different applications.