Fabrication of Pi-phase shift x-ray zone plates

Jeng-Tzong Sheu*, Ming Hsiung Chiang, Shyang Su

*此作品的通信作者

研究成果: Article同行評審

摘要

In x-ray applications, x-ray zone plates are very useful as microfocusing components in x-ray optics. This paper presents both theoretical consideration and the fabrication procedure for producing π-phase shift x-ray zone plates for x-ray focusing in the range of 800 eV to 1700 eV in x-ray scanning photon emission microscopy by x-ray mask technology. The x-ray zone plates are fabricated on 0.7 μm low-stress silicon-rich silicon nitride (SiNx) membranes with tri-layer Chromium-Tungsten-Chromium (Cr-W-Cr) as x-ray absorbers instead of Nickel or Gold. The SiNx film is deposited on the (100) silicon substrate using low pressure chemical vapor deposition (LPCVD), and the free standing membranes are formed by means of KOH silicon backside etching. With e-beam lithography and reactive ion etching, a width of 0.8 μm of outmost zone of the x-ray zone plates was obtained. Scanning electron microscopy (SEM) images of the x-ray zone plates are shown.

原文English
頁(從 - 到)611-615
頁數5
期刊Proceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering
21
發行號6
出版狀態Published - 11月 1997

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