Fabrication of phase-change Ge2Sb2Te5 nano-rings

Cheng Hung Chu; Ming Lun Tseng; Chiun Da Shiue; Shuan Wei Chen; Hai Pang Chiang; Masud Mansuripur; Din Ping Tsai

doi:10.1364/OE.19.012652

Fabrication of phase-change Ge₂Sb₂Te₅ nano-rings

Cheng Hung Chu, Ming Lun Tseng, Chiun Da Shiue, Shuan Wei Chen, Hai Pang Chiang, Masud Mansuripur, Din Ping Tsai

電子研究所

研究成果: Article › 同行評審

23 引文斯高帕斯（Scopus）

摘要

Phase-change material Ge₂Sb₂Te₅ rings with nanometer-scale thickness have been fabricated using the photo-thermal effect of a focused laser beam followed by differential chemical etching. Laser irradiation conditions and etching process parameters are varied to control the geometric characteristics of the rings. We demonstrate the possibility of arranging the rings in specific geometric patterns, and also their release from the original substrate.

原文	English
頁（從 - 到）	12652-12657
頁數	6
期刊	Optics Express
卷	19
發行號	13
DOIs	https://doi.org/10.1364/OE.19.012652
出版狀態	Published - 20 6月 2011

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10.1364/OE.19.012652

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abstract = "Phase-change material Ge2Sb2Te5 rings with nanometer-scale thickness have been fabricated using the photo-thermal effect of a focused laser beam followed by differential chemical etching. Laser irradiation conditions and etching process parameters are varied to control the geometric characteristics of the rings. We demonstrate the possibility of arranging the rings in specific geometric patterns, and also their release from the original substrate.",

author = "Chu, {Cheng Hung} and Tseng, {Ming Lun} and {Da Shiue}, Chiun and Chen, {Shuan Wei} and Chiang, {Hai Pang} and Masud Mansuripur and Tsai, {Din Ping}",

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AU - Chu, Cheng Hung

AU - Tseng, Ming Lun

AU - Da Shiue, Chiun

AU - Chen, Shuan Wei

AU - Chiang, Hai Pang

AU - Mansuripur, Masud

AU - Tsai, Din Ping

PY - 2011/6/20

Y1 - 2011/6/20

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AB - Phase-change material Ge2Sb2Te5 rings with nanometer-scale thickness have been fabricated using the photo-thermal effect of a focused laser beam followed by differential chemical etching. Laser irradiation conditions and etching process parameters are varied to control the geometric characteristics of the rings. We demonstrate the possibility of arranging the rings in specific geometric patterns, and also their release from the original substrate.

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Fabrication of phase-change Ge2Sb2Te5 nano-rings

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Fabrication of phase-change Ge₂Sb₂Te₅ nano-rings