Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH₃ plasma passivation effects

Keyphrases

• Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs) 100%
• Metal-induced Crystallization 100%
• Passivation Effect 100%
• Plasma Passivation 100%
• NH3 Plasma 100%
• Metal-induced 60%
• Poly-Si 20%
• On-state Current 20%
• Silica 20%
• Grain Boundary 20%
• Current Ratio 20%
• Device Performance 20%
• Plasma Treatment 20%
• Steep Subthreshold Swing 20%
• Hydrogen Passivation 20%
• High Mobility 20%
• Dangling Bonds 20%
• New Pattern 20%
• 4-mask Process 20%

Engineering

• Passivation 100%
• Thin-Film Transistor 100%
• Polysilicon 100%
• Si Interface 20%
• Plasma Treatment 20%
• Current Ratio 20%
• Device Performance 20%
• Dangling Bond 20%

Material Science

• Thin-Film Transistor 100%
• Grain Boundary 50%