@inproceedings{7b649bc83ad64d54a95ce2662897d376,
title = "Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH3 plasma passivation effects",
abstract = "A pattern-dependent metal-induced lateral crystallized (PDMLC) poly-Si thin film transistor was successfully demonstrated and characterized. The fabrication of new PDMLC is simple with only four-mask process. After NH 3 plasma passivation, the device performance was enhanced, including the high on/off current ratio (>106), the high mobility (31.19 cm2/Vs), and the steep subthreshold swing (0.483 V/dec). The performance of PDMLC TFT with NH3 plasma passivation is superior to that of the counterpart without NH3 plasma passivation. The NH 3 plasma treatment can result in the effective hydrogen passivation of the grain-boundary dangling bonds, and the nitrogen pile-up at SiO 2/poly-Si interface.",
author = "Chou, {Cheng Wei} and Wu, {Yung Chun} and Wu, {Yuan Chun} and Chang, {Ting Chang} and Po-Tsun Liu and Lou, {Jen Chung} and Huang, {Wen Jun} and Chang, {Chun Yen} and Sze, {Simon M.}",
year = "2005",
month = feb,
language = "English",
isbn = "9572852221",
series = "International Display Manufacturing Conference and Exhibition, IDMC'05",
pages = "517--519",
editor = "{David Shieh}, H.P. and F.C. Chen",
booktitle = "Proceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05",
note = "null ; Conference date: 21-02-2005 Through 24-02-2005",
}