@inproceedings{fb6b3cf663c041ea80109702ab34189f,
title = "Fabrication of omega-gated negative capacitance finfets and SRAM",
abstract = "Omega-gated negative capacitance (NC) FinFETs, CMOS inverters and SRAM are fabricated and analyzed. Forming gas annealing (FGA) is performed and found to not only enhance ferroelectricity (FE) but also the NCFET electrostatics, in terms of higher \mathrm{I}-{\mathrm{ON}}, smaller hysteresis and subthreshold slop (SS). The SS is less than 60 mV/dec for both N-FinFET and P-FinFET in this work. Moreover, the CMOS inverter shows more symmetric and larger voltage gain after FGA.",
author = "Sung, {P. J.} and Su, {C. J.} and Lu, {D. D.} and Luo, {S. X.} and Kao, {K. H.} and Ciou, {J. Y.} and Jao, {C. Y.} and Hsu, {H. S.} and Wang, {C. J.} and Hong, {T. C.} and Liao, {T. H.} and Fang, {C. C.} and Wang, {Y. S.} and Huang, {H. F.} and Li, {J. H.} and Huang, {Y. C.} and Hsueh, {F. K.} and Wu, {C. T.} and Ma, {W. C.Y.} and Huang, {K. P.} and Lee, {Y. J.} and Tien-Sheng Chao and Li, {J. Y.} and Wu, {W. F.} and Yeh, {W. K.} and Wang, {Y. H.}",
year = "2019",
month = apr,
doi = "10.1109/VLSI-TSA.2019.8804663",
language = "English",
series = "2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019",
address = "美國",
note = "2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 ; Conference date: 22-04-2019 Through 25-04-2019",
}