Fabrication of NiSi2 nanocrystals embedded in SiO2 with memory effect by oxidation of the amorphous Si/Ni/SiO2 structure

P. H. Yeh*, H. H. Wu, C. H. Yu, L. J. Chen, Po-Tsun Liu, C. H. Hsu, T. C. Chang

*此作品的通信作者

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

NiSi2 nanocrystals embedded in the SiO2 layer exhibiting a memory effect have been formed by dry oxidation of an amorphous SiNi SiO2 structure at 900 °C. A pronounced capacitance-voltage hysteresis was observed with a memory window of 1 V under the 2 V programming voltage for the samples. For dry oxidation at 800 °C, no distinct memory effect was detected. The processing of the structure is compatible with the current manufacturing technology of the semiconductor industry. The structure represents a viable candidate for low-power nanoscaled nonvolatile memory devices.

原文English
頁(從 - 到)851-855
頁數5
期刊Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
23
發行號4
DOIs
出版狀態Published - 7月 2005

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