This article reports results from the successful fabrication of metal-oxide-semiconductor (MOS) devices with extreme ultraviolet lithography, n-type MOS transistors with gate lengths of 0.1 μm were fabricated and demonstrated good device characteristics. The alignment strategy, mask layout, mask fabrication, and device characteristics will be reported.
|頁（從 - 到）||4188-4192|
|期刊||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版狀態||Published - 1 十一月 1996|