Fabrication of metal-oxide-semiconductor devices with extreme ultraviolet lithography

K. B. Nguyen*, G. F. Cardinale, D. A. Tichenor, G. D. Kubiak, K. Berger, A. K. Ray-Chaudhuri, Y. Perras, S. J. Haney, R. Nissen, K. Krenz, R. H. Stulen, H. Fujioka, Chen-Ming Hu, J. Bokor, D. M. Tennant, L. A. Fetter

*此作品的通信作者

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

This article reports results from the successful fabrication of metal-oxide-semiconductor (MOS) devices with extreme ultraviolet lithography, n-type MOS transistors with gate lengths of 0.1 μm were fabricated and demonstrated good device characteristics. The alignment strategy, mask layout, mask fabrication, and device characteristics will be reported.

原文English
頁(從 - 到)4188-4192
頁數5
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
14
發行號6
DOIs
出版狀態Published - 1 十一月 1996

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