Fabrication of Highly (111)-oriented Nanotwinned Cu in Fine-pitch Vias for Cu/SiO2Hybrid Bonding

Shih Chi Yang*, Jia Juen Ong, Dinh Phuc Tran, Wei Lan Chiu, Ou Hsing Lee, Chia Wen Chiang, Hsiang Hung Chang, Chin Hung Wang, Chih Chen

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Nanotwinned Cu (NT-Cu) with highly (111)-oriented surface is beneficial to achieve low temperature Cu-Cu bonding. Nonetheless, it is difficult to deposit NT-Cu in Cu/SiO2 in small damascene vias. To overcome the restrict of the sidewall effect that may reduce surface (111) ratio of the vias, an optimized electrodeposition (ECD) approach was carried out. By tuning the electroplating temperatures and waveforms, we can successfully deposit NT-Cu into fine-pitch Cu/SiO2 vias. A bottom-up growing mode of NT-Cu can effectively reduce sidewall effect. Surface (111) ratio exceeds 80% and 55% for 8-μm and 2-μm Cu/SiO2 vias in diameter, respectively. Moreover, a theoretical model of predicting (111) ratio in small Cu/SiO2 vias based on the optimized ECD approach was proposed.

原文English
主出版物標題2023 International Conference on Electronics Packaging, ICEP 2023
發行者Institute of Electrical and Electronics Engineers Inc.
頁面13-14
頁數2
ISBN(電子)9784991191152
DOIs
出版狀態Published - 2023
事件22nd International Conference on Electronics Packaging, ICEP 2023 - Kumamoto, Japan
持續時間: 19 4月 202322 4月 2023

出版系列

名字2023 International Conference on Electronics Packaging, ICEP 2023

Conference

Conference22nd International Conference on Electronics Packaging, ICEP 2023
國家/地區Japan
城市Kumamoto
期間19/04/2322/04/23

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