Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication

Hao-Chung Kuo*, Y. H. Chang, Y. A. Chang, K. F. Tseng, L. H. Laih, S. C. Wang, Hsin-Chieh Yu, C. P. Sung, H. P. Yang

*此作品的通信作者

研究成果: Conference article同行評審

摘要

In this paper, we demonstrate high performance 850 nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior performance with threshold currents of ∼0.4 mA, and slope efficiencies of ∼0.6 mW/mA. High modulation bandwidth of 14.5 GHz and modulation current efficiency factor of 11.6 GHz/(mA) 1/2 are demonstrated. We have accumulated life test data up to 1000 hours at 70°C/8mA. In addition, we also report a high speed planarized 850nm oxide-implanted VCSELs process that does not require semiinsulating substrates, polyimide planarization process, or very small pad areas, therefore very promising in mass manufacture.

原文English
文章編號06
頁(從 - 到)50-57
頁數8
期刊Proceedings of SPIE - The International Society for Optical Engineering
5624
DOIs
出版狀態Published - 6 5月 2005
事件Semiconductor and Organic Optoelectronic Materials and Devices - Beijing, China
持續時間: 9 11月 200411 11月 2004

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