Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication

Hao-Chung Kuo; Y. H. Chang; Y. A. Chang; K. F. Tseng; L. H. Laih; S. C. Wang; Hsin-Chieh Yu; C. P. Sung; H. P. Yang

doi:10.1117/12.577050

Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication

Hao-Chung Kuo^*, Y. H. Chang, Y. A. Chang, K. F. Tseng, L. H. Laih, S. C. Wang, Hsin-Chieh Yu, C. P. Sung, H. P. Yang

^*此作品的通信作者

研究成果: Conference article › 同行評審

摘要

In this paper, we demonstrate high performance 850 nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior performance with threshold currents of ∼0.4 mA, and slope efficiencies of ∼0.6 mW/mA. High modulation bandwidth of 14.5 GHz and modulation current efficiency factor of 11.6 GHz/(mA) ^1/2 are demonstrated. We have accumulated life test data up to 1000 hours at 70°C/8mA. In addition, we also report a high speed planarized 850nm oxide-implanted VCSELs process that does not require semiinsulating substrates, polyimide planarization process, or very small pad areas, therefore very promising in mass manufacture.

原文	English
文章編號	06
頁（從 - 到）	50-57
頁數	8
期刊	Proceedings of SPIE - The International Society for Optical Engineering
卷	5624
DOIs	https://doi.org/10.1117/12.577050
出版狀態	Published - 6 5月 2005
事件	Semiconductor and Organic Optoelectronic Materials and Devices - Beijing, 中國持續時間: 9 11月 2004 → 11 11月 2004

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@article{3289d63346704314be829d9618ec4cca,

title = "Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication",

abstract = " In this paper, we demonstrate high performance 850 nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior performance with threshold currents of ∼0.4 mA, and slope efficiencies of ∼0.6 mW/mA. High modulation bandwidth of 14.5 GHz and modulation current efficiency factor of 11.6 GHz/(mA) 1/2 are demonstrated. We have accumulated life test data up to 1000 hours at 70°C/8mA. In addition, we also report a high speed planarized 850nm oxide-implanted VCSELs process that does not require semiinsulating substrates, polyimide planarization process, or very small pad areas, therefore very promising in mass manufacture. ",

keywords = "High-speed electronics, InGaAsP/InGaP, Proton-implant, Strain-compensated, VCSELs",

author = "Hao-Chung Kuo and Chang, {Y. H.} and Chang, {Y. A.} and Tseng, {K. F.} and Laih, {L. H.} and Wang, {S. C.} and Hsin-Chieh Yu and Sung, {C. P.} and Yang, {H. P.}",

year = "2005",

month = may,

day = "6",

doi = "10.1117/12.577050",

language = "English",

volume = "5624",

pages = "50--57",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Semiconductor and Organic Optoelectronic Materials and Devices ; Conference date: 09-11-2004 Through 11-11-2004",

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TY - JOUR

T1 - Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication

AU - Kuo, Hao-Chung

AU - Chang, Y. H.

AU - Chang, Y. A.

AU - Tseng, K. F.

AU - Laih, L. H.

AU - Wang, S. C.

AU - Yu, Hsin-Chieh

AU - Sung, C. P.

AU - Yang, H. P.

PY - 2005/5/6

Y1 - 2005/5/6

N2 - In this paper, we demonstrate high performance 850 nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior performance with threshold currents of ∼0.4 mA, and slope efficiencies of ∼0.6 mW/mA. High modulation bandwidth of 14.5 GHz and modulation current efficiency factor of 11.6 GHz/(mA) 1/2 are demonstrated. We have accumulated life test data up to 1000 hours at 70°C/8mA. In addition, we also report a high speed planarized 850nm oxide-implanted VCSELs process that does not require semiinsulating substrates, polyimide planarization process, or very small pad areas, therefore very promising in mass manufacture.

AB - In this paper, we demonstrate high performance 850 nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior performance with threshold currents of ∼0.4 mA, and slope efficiencies of ∼0.6 mW/mA. High modulation bandwidth of 14.5 GHz and modulation current efficiency factor of 11.6 GHz/(mA) 1/2 are demonstrated. We have accumulated life test data up to 1000 hours at 70°C/8mA. In addition, we also report a high speed planarized 850nm oxide-implanted VCSELs process that does not require semiinsulating substrates, polyimide planarization process, or very small pad areas, therefore very promising in mass manufacture.

KW - High-speed electronics

KW - InGaAsP/InGaP

KW - Proton-implant

KW - Strain-compensated

KW - VCSELs

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U2 - 10.1117/12.577050

DO - 10.1117/12.577050

M3 - Conference article

AN - SCOPUS:17644416133

SN - 0277-786X

VL - 5624

SP - 50

EP - 57

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 06

T2 - Semiconductor and Organic Optoelectronic Materials and Devices

Y2 - 9 November 2004 through 11 November 2004

ER -

Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication

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