Fabrication of high-sensitivity polycrystalline silicon nanowire field-effect transistor ph sensor using conventional complementary metal-oxide-semiconductor technology

Keyphrases

• Polysilicon 100%
• Silicon Nanowire Field-effect Transistor (SNWFET) 100%
• High Sensitivity 100%
• PH Sensor 100%
• Complementary Metal-oxide-semiconductor Technology 100%
• Self-aligned 50%
• Vertical Channel 50%
• Complementary Metal Oxide Semiconductor 50%
• High Cost 25%
• Integrated Circuits 25%
• Threshold Voltage Shift 25%
• Fabrication Methods 25%
• NWFET 25%
• Pre-oxidation 25%
• Gate Bias 25%
• Nanowires 25%
• On-a-chip 25%
• PH-sensitive 25%
• Coupled Operation 25%
• Bias Control 25%
• Nanowire Devices 25%
• Independent Gate 25%
• Sensitivity Threshold 25%
• ISFET 25%
• Electrical Uniformity 25%
• Semiconductor Process 25%
• Surface Channel 25%
• Buried Channel 25%
• Self-aligned Fabrication 25%
• Field-effect Sensor 25%
• Biosensor System 25%
• Silicon Nanowire Sensor 25%
• Very Large Scale Integrated Circuits 25%
• Semiconductor Manufacturing Process 25%
• Very Large Scale Integration 25%
• Silicon Devices 25%
• Lithography Equipment 25%

Engineering

• Field-Effect Transistor 100%
• Using Sensor 100%
• Complementary Metal-Oxide-Semiconductor 100%
• Polysilicon 100%
• Nanowire 100%
• Field Effect Transistor 20%
• Biosensor 20%
• Semiconductor Manufacturing 20%
• Manufacturing Process 20%
• VLSI Circuits 20%
• Gate Bias 20%
• Silicon Device 20%
• Reoxidation 20%
• Fabrication Approach 20%
• Large Scale Integrated Circuit 20%
• Nanowire Device 20%
• Sensitive Ion Channel 20%
• Lithography 20%
• Sensitivity Threshold 20%

Material Science

• Silicon 100%
• Nanowire 100%
• Field Effect Transistor 100%
• Complementary Metal-Oxide-Semiconductor Device 100%
• Electronic Circuit 33%
• Surface (Surface Science) 33%
• Lithography 16%
• Silicon Device 16%