摘要
A pyramidal pattern was produced on a c-plane sapphire substrate by a mask-free etching process. Photoluminescence (PL) results show that a GaN-based light-emitting diode (LED) epilayer grown on the pyramidally patterned sapphire substrate has higher epitaxial quality than that grown on a standard flat c-plane sapphire substrate. When the input current is 350 mA, the average light output power of LED chips on the pyramidally patterned sapphire substrate is 37% larger than that of LED chips on a standard c-plane sapphire substrate. # 2010 The Japan Society of Applied Physics
| 原文 | English |
|---|---|
| 文章編號 | 020201 |
| 期刊 | Japanese Journal of Applied Physics |
| 卷 | 49 |
| 發行號 | 2 Part 1 |
| DOIs | |
| 出版狀態 | Published - 2月 2010 |