Fabrication of high electrical performance NILC-TFTs using FSG buffer layer

C. C. Chen; Yew-Chuhg Wu; T. F. Tung; H. Y. Wu

doi:10.1149/1.3375627

Fabrication of high electrical performance NILC-TFTs using FSG buffer layer

C. C. Chen, Yew-Chuhg Wu, T. F. Tung, H. Y. Wu

材料科學與工程學系

研究成果: Conference contribution › 同行評審

摘要

Fluorinated-silicate-glass (FSG) was combined with Ni-metal-induced lateral crystallization (NILC) polycrystalline silicon thin-film transistors (poly-Si TFTs). It was found that the electrical performances were improved because the trap-state density was decreased by fluorine-ion passivation. Moreover, FSG-NILC-TFTs possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability.

原文	English
主出版物標題	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6
主出版物子標題	New Materials, Processes, and Equipment
頁面	401-404
頁數	4
版本	1
DOIs	https://doi.org/10.1149/1.3375627
出版狀態	Published - 30 12月 2010
事件	Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting - Vancouver, BC, 加拿大持續時間: 26 4月 2010 → 27 4月 2010

出版系列

名字	ECS Transactions
號碼	1
卷	28
ISSN（列印）	1938-5862
ISSN（電子）	1938-6737

Conference

Conference	Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting
國家/地區	加拿大
城市	Vancouver, BC
期間	26/04/10 → 27/04/10

存取文件

10.1149/1.3375627

其它文件與鏈接

Link to publication in Scopus

引用此

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title = "Fabrication of high electrical performance NILC-TFTs using FSG buffer layer",

abstract = "Fluorinated-silicate-glass (FSG) was combined with Ni-metal-induced lateral crystallization (NILC) polycrystalline silicon thin-film transistors (poly-Si TFTs). It was found that the electrical performances were improved because the trap-state density was decreased by fluorine-ion passivation. Moreover, FSG-NILC-TFTs possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability.",

author = "Chen, {C. C.} and Yew-Chuhg Wu and Tung, {T. F.} and Wu, {H. Y.}",

year = "2010",

month = dec,

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language = "English",

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series = "ECS Transactions",

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pages = "401--404",

booktitle = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6",

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note = "Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting ; Conference date: 26-04-2010 Through 27-04-2010",

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Chen, CC, Wu, Y-C, Tung, TF & Wu, HY 2010, Fabrication of high electrical performance NILC-TFTs using FSG buffer layer. 於 Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment. 1 edn, ECS Transactions, 編號 1, 卷 28, 頁 401-404, Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting, Vancouver, BC, 加拿大, 26/04/10. https://doi.org/10.1149/1.3375627

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T1 - Fabrication of high electrical performance NILC-TFTs using FSG buffer layer

AU - Chen, C. C.

AU - Wu, Yew-Chuhg

AU - Tung, T. F.

AU - Wu, H. Y.

PY - 2010/12/30

Y1 - 2010/12/30

N2 - Fluorinated-silicate-glass (FSG) was combined with Ni-metal-induced lateral crystallization (NILC) polycrystalline silicon thin-film transistors (poly-Si TFTs). It was found that the electrical performances were improved because the trap-state density was decreased by fluorine-ion passivation. Moreover, FSG-NILC-TFTs possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability.

AB - Fluorinated-silicate-glass (FSG) was combined with Ni-metal-induced lateral crystallization (NILC) polycrystalline silicon thin-film transistors (poly-Si TFTs). It was found that the electrical performances were improved because the trap-state density was decreased by fluorine-ion passivation. Moreover, FSG-NILC-TFTs possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability.

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U2 - 10.1149/1.3375627

DO - 10.1149/1.3375627

M3 - Conference contribution

AN - SCOPUS:78650537193

SN - 9781566777919

T3 - ECS Transactions

SP - 401

EP - 404

BT - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6

T2 - Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting

Y2 - 26 April 2010 through 27 April 2010

ER -

Fabrication of high electrical performance NILC-TFTs using FSG buffer layer

摘要

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Conference

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