Fluorinated-silicate-glass (FSG) was combined with Ni-metal-induced lateral crystallization (NILC) polycrystalline silicon thin-film transistors (poly-Si TFTs). It was found that the electrical performances were improved because the trap-state density was decreased by fluorine-ion passivation. Moreover, FSG-NILC-TFTs possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability.
|主出版物標題||Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6|
|主出版物子標題||New Materials, Processes, and Equipment|
|出版狀態||Published - 30 12月 2010|
|事件||Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting - Vancouver, BC, Canada|
持續時間: 26 4月 2010 → 27 4月 2010
|Conference||Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting|
|期間||26/04/10 → 27/04/10|