@inproceedings{aab03192c98b4f7ca96af25a2cc972c7,
title = "Fabrication of high electrical performance NILC-TFTs using FSG buffer layer",
abstract = "Fluorinated-silicate-glass (FSG) was combined with Ni-metal-induced lateral crystallization (NILC) polycrystalline silicon thin-film transistors (poly-Si TFTs). It was found that the electrical performances were improved because the trap-state density was decreased by fluorine-ion passivation. Moreover, FSG-NILC-TFTs possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability.",
author = "Chen, {C. C.} and Yew-Chuhg Wu and Tung, {T. F.} and Wu, {H. Y.}",
year = "2010",
month = dec,
day = "30",
doi = "10.1149/1.3375627",
language = "English",
isbn = "9781566777919",
series = "ECS Transactions",
number = "1",
pages = "401--404",
booktitle = "Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 6",
edition = "1",
note = "Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment, 6 - 217th ECS Meeting ; Conference date: 26-04-2010 Through 27-04-2010",
}