Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques

Tzu Chieh Hong, Wen Hsiang Lu, Yeong Her Wang, Jiun Yun Li, Yao Jen Lee*, Tien Sheng Chao

*此作品的通信作者

研究成果: Article同行評審

摘要

Germanium-tin (GeSn) epitaxy layer was prepared on an 8-in SOI wafer with a Ge buffer layer. The etching rates of different solutions for the GeSn layer were investigated. The ammonia peroxide mixture can remove the Ge buffer layer with high efficiency and selectivity to the GeSn layer. Heated ammonia solution is able to etch the Si layer without damaging the GeSn layer significantly. The two-step etching process developed in this study is conducive to achieving GeSn nanowires (NWs) by selectively etching the Ge buffer and Si bottom layers. GeSn NWFETs were fabricated and measured. The strain of the GeSn NW channels is preserved with the optimized fabrication process proposed in this study.

原文English
頁(從 - 到)2028-2033
頁數6
期刊IEEE Transactions on Electron Devices
70
發行號4
DOIs
出版狀態Published - 1 4月 2023

指紋

深入研究「Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques」主題。共同形成了獨特的指紋。

引用此