Fabrication of deep lateral single-crystal-silicon blaze micro-grating by inductively-coupled-plasma reactive ion etch

Y. H. Lin*, C. J. Weng, C. Y. Su, W. Hsu

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

This paper presents a method by using a compensative structure assisted to fabricate deep lateral single-crystal-silicon (SCS) blaze micro-grating at Inductively-Coupled-Plasma Reactive Ion Etch (ICP-RIE). Due to the high resolution of blaze micro-grating, it's hard to maintain the teeth structure of blaze micro-grating under deep silicon etch in ICP-RIE process. Here, the independent rectangular structure and symmetrical structure to micro-grating is designed to obstruct the non-vertical plasma ion to etch the sidewall of micro-grating structure and to get better the profile control at deep micro-grating structure. The lateral silicon blaze micro-grating with 100 μm thickness by compensative structure assisted etch process have been successfully demonstrated this method.

原文English
主出版物標題2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
頁面689-692
頁數4
DOIs
出版狀態Published - 2012
事件7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012 - Kyoto, 日本
持續時間: 5 3月 20128 3月 2012

出版系列

名字2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012

Conference

Conference7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
國家/地區日本
城市Kyoto
期間5/03/128/03/12

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