@article{d0e1650457b74c88951ccdaaf3c543e0,
title = "Fabrication of Bilayer Stacked Antiferroelectric/ Ferroelectric HfxZr1-xO2FeRAM and FeFET With Improved Leakage Current and Robust Reliability by Modifying Atomic Layer Deposition Temperatures",
abstract = "We fabricated FeRAM and FeFET with a bilayer HfxZr1-xO2 (HZO), which comprises 5-nm-thick antiferroelectric HZO and 5-nm-thick ferroelectric HZO. Higher orthorhombic phase and large grain size were shown in grazing-incidence x-ray diffraction and TEM results, respectively. By using low ALD temperature, the leakage current ( $ < 3\times 10^{-{5}}$ A/cm2 under ±2V), gate control ability, the memory window (>1.5V) andthe endurance (107 cycles) have been improved. These results suggest that a low atomic layer deposition temperature is a promising process for use in non-volatile memory devices.",
keywords = "Antiferroelectric, HfZrO, atomic layer deposition temperature, ferroelectric, grain boundary, grain size",
author = "Chieh Lo and Chang, {Shu Chieh} and Lin, {Kun Tao} and Chen, {Chung Kuang} and Chang, {Chen Feng} and Zhang, {Feng Shuo} and Lu, {Zong Han} and Chao, {Tien Sheng}",
note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2023",
month = jun,
day = "1",
doi = "10.1109/LED.2023.3268179",
language = "English",
volume = "44",
pages = "883--886",
journal = "Ieee Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}