Fabrication of a germanium quantum-dot single-electron transistor with large Coulomb-blockade oscillations at room temperature

Pei-Wen Li*, W. M. Liao, David M.T. Kuo, S. W. Lin, P. S. Chen, S. C. Lu, M. J. Tsai

*此作品的通信作者

研究成果: Article同行評審

63 引文 斯高帕斯(Scopus)

摘要

The fabrication of a germanium quantum-dot (QD) single-electron transistor using complementary metal-oxide-semiconductor-compatible method was proposed. The tunneling currents through the Ge QD were simulated by the Anderson model with two energy levels. The total capacitance of the dot was calculated to be 2.13 aF. The analysis of the current-voltage characteristics indicated that the single-electron addition energy of the Ge QD was about 125 meV.

原文English
頁(從 - 到)1532-1534
頁數3
期刊Applied Physics Letters
85
發行號9
DOIs
出版狀態Published - 30 8月 2004

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