Fabrication and simulation of neutral-beam-etched silicon nanopillars

Min Hui Chuang; Daisuke Ohori; Yi-Ming Li; Kuan Ru Chou; Seiji Samukawa

doi:10.1016/j.vacuum.2020.109577

Fabrication and simulation of neutral-beam-etched silicon nanopillars

Min Hui Chuang, Daisuke Ohori, Yi-Ming Li^*, Kuan Ru Chou, Seiji Samukawa

^*此作品的通信作者

電信工程研究所

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

In this study, we do the experiment and simulation of the silicon nanopillars fabricated by a damage-free neutral-beam-etching system combined with bio-template-mask technology. The fabricated silicon nanopillars are with the diameter of 16 nm and the height of 90 nm and the density is 6.5 × 10¹⁰/cm² with variation of 3%. We model and simulate the fabricated silicon nanopillars by periodical cylinder in Si_0.7Ge_0.3 matrix to estimate the energy profile with different wave vectors. The variations of the energy with respect to the height, diameter, and the separation of the simulated silicon nanopillars are reported. The results of this work will be useful for thermoelectric applications.

原文	English
文章編號	109577
頁數	5
期刊	Vacuum
卷	181
DOIs	https://doi.org/10.1016/j.vacuum.2020.109577
出版狀態	Published - 11月 2020
事件	24th International Electron Devices and Materials Symposium (IEDMS) - Taipei 持續時間: 24 10月 2019 → 25 10月 2019

存取文件

10.1016/j.vacuum.2020.109577

其它文件與鏈接

Link to publication in Scopus

引用此

@article{d60366122d3245b5a78ff0ceb13b57c2,

title = "Fabrication and simulation of neutral-beam-etched silicon nanopillars",

abstract = "In this study, we do the experiment and simulation of the silicon nanopillars fabricated by a damage-free neutral-beam-etching system combined with bio-template-mask technology. The fabricated silicon nanopillars are with the diameter of 16 nm and the height of 90 nm and the density is 6.5 × 1010/cm2 with variation of 3%. We model and simulate the fabricated silicon nanopillars by periodical cylinder in Si0.7Ge0.3 matrix to estimate the energy profile with different wave vectors. The variations of the energy with respect to the height, diameter, and the separation of the simulated silicon nanopillars are reported. The results of this work will be useful for thermoelectric applications.",

keywords = "Energy-band profile, Fabrication process, Neutral-beam etching, Silicon nanopillar, Simulation",

author = "Chuang, {Min Hui} and Daisuke Ohori and Yi-Ming Li and Chou, {Kuan Ru} and Seiji Samukawa",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier Ltd; 24th International Electron Devices and Materials Symposium (IEDMS) ; Conference date: 24-10-2019 Through 25-10-2019",

year = "2020",

month = nov,

doi = "10.1016/j.vacuum.2020.109577",

language = "English",

volume = "181",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Fabrication and simulation of neutral-beam-etched silicon nanopillars

AU - Chuang, Min Hui

AU - Ohori, Daisuke

AU - Li, Yi-Ming

AU - Chou, Kuan Ru

AU - Samukawa, Seiji

PY - 2020/11

Y1 - 2020/11

N2 - In this study, we do the experiment and simulation of the silicon nanopillars fabricated by a damage-free neutral-beam-etching system combined with bio-template-mask technology. The fabricated silicon nanopillars are with the diameter of 16 nm and the height of 90 nm and the density is 6.5 × 1010/cm2 with variation of 3%. We model and simulate the fabricated silicon nanopillars by periodical cylinder in Si0.7Ge0.3 matrix to estimate the energy profile with different wave vectors. The variations of the energy with respect to the height, diameter, and the separation of the simulated silicon nanopillars are reported. The results of this work will be useful for thermoelectric applications.

AB - In this study, we do the experiment and simulation of the silicon nanopillars fabricated by a damage-free neutral-beam-etching system combined with bio-template-mask technology. The fabricated silicon nanopillars are with the diameter of 16 nm and the height of 90 nm and the density is 6.5 × 1010/cm2 with variation of 3%. We model and simulate the fabricated silicon nanopillars by periodical cylinder in Si0.7Ge0.3 matrix to estimate the energy profile with different wave vectors. The variations of the energy with respect to the height, diameter, and the separation of the simulated silicon nanopillars are reported. The results of this work will be useful for thermoelectric applications.

KW - Energy-band profile

KW - Fabrication process

KW - Neutral-beam etching

KW - Silicon nanopillar

KW - Simulation

UR - http://www.scopus.com/inward/record.url?scp=85088897650&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2020.109577

DO - 10.1016/j.vacuum.2020.109577

M3 - Article

AN - SCOPUS:85088897650

SN - 0042-207X

VL - 181

JO - Vacuum

JF - Vacuum

M1 - 109577

T2 - 24th International Electron Devices and Materials Symposium (IEDMS)

Y2 - 24 October 2019 through 25 October 2019

ER -

Fabrication and simulation of neutral-beam-etched silicon nanopillars

摘要

存取文件

其它文件與鏈接

指紋

引用此