FABRICATION AND EVALUATION OF InSb MIS STRUCTURE PREPARED BY PHOTO-CHEMICAL VAPOR DEPOSITION.

Kai-Feng Huang*, J. S. Shie, J. J. Luo, J. S. Chen, S. J. Yang, S. L. Tu

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

Thin silicon dioxide films were prepared by photo chemical vapor deposition. IR absorption and Auger electron spectroscopy have shown that the dominant components of the oxide are silicon and oxygen with little amount of hydrogen. MIS capacitors were constructed on InSb substrates. C-V characteristics of the MIS capacitors were measured, and mid-gap interface state density of low 10**1**2 cm** minus **2eV** minus **1 was determined. The amount of hysteresis observed was found to be about 10% of the inversion bias voltage. Annealing studies were also conducted to improve the electrical properties. After annealing, mid-gap interface state density was reduced to 5 multiplied by 10** minus **1**1 cm** minus **2eV** minus **1 and the amount of hysteresis reduced to 5% of the inversion bias voltage.

原文English
主出版物標題Proceedings of SPIE - The International Society for Optical Engineering
編輯F.D. Morten, John S. Seeley
發行者SPIE
頁面11-15
頁數5
ISBN(列印)0892526238
DOIs
出版狀態Published - 7 7月 1986

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
588
ISSN(列印)0277-786X

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