Fabrication and emission characteristic of InGaN/GaN multiple quantum wells nanorods

T. H. Hsueh; Y. S. Chang; F. Lai; H. W. Huang; M. C. Ou-yang; C. W. Chang; Hao-Chung Kuo; S. C. Wang; J. K. Sheu

doi:10.1364/IQEC.2004.IWA20

Fabrication and emission characteristic of InGaN/GaN multiple quantum wells nanorods

T. H. Hsueh^*
, Y. S. Chang
, F. Lai
, H. W. Huang
, M. C. Ou-yang
, C. W. Chang
, Hao-Chung Kuo
, S. C. Wang
, J. K. Sheu

^*此作品的通信作者

光電工程學系

研究成果: Conference article › 同行評審

摘要

InGaN/GaN multiple quantum wells (MQWs) nanorods with 100 nm in diameter were fabricated by inductively coupled plasma (ICP) etching. The nanorods show large blue-shift in peak photoluminescence emission wavelength compared to that of the bulk emission.

原文	English
頁（從 - 到）	607-608
頁數	2
期刊	OSA Trends in Optics and Photonics Series
卷	97
DOIs	https://doi.org/10.1364/IQEC.2004.IWA20
出版狀態	Published - 5月 2004
事件	International Quantum Electronics Conference, IQEC - San Francisco, CA, 美國持續時間: 21 5月 2004 → 26 5月 2004

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10.1364/IQEC.2004.IWA20

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@article{6d75f8219b274be7b35176668ed188cd,

title = "Fabrication and emission characteristic of InGaN/GaN multiple quantum wells nanorods",

abstract = "InGaN/GaN multiple quantum wells (MQWs) nanorods with 100 nm in diameter were fabricated by inductively coupled plasma (ICP) etching. The nanorods show large blue-shift in peak photoluminescence emission wavelength compared to that of the bulk emission.",

author = "Hsueh, \{T. H.\} and Chang, \{Y. S.\} and F. Lai and Huang, \{H. W.\} and Ou-yang, \{M. C.\} and Chang, \{C. W.\} and Hao-Chung Kuo and Wang, \{S. C.\} and Sheu, \{J. K.\}",

year = "2004",

month = may,

doi = "10.1364/IQEC.2004.IWA20",

language = "English",

volume = "97",

pages = "607--608",

journal = "OSA Trends in Optics and Photonics Series",

issn = "1094-5695",

note = "International Quantum Electronics Conference, IQEC ; Conference date: 21-05-2004 Through 26-05-2004",

}

TY - JOUR

T1 - Fabrication and emission characteristic of InGaN/GaN multiple quantum wells nanorods

AU - Hsueh, T. H.

AU - Chang, Y. S.

AU - Lai, F.

AU - Huang, H. W.

AU - Ou-yang, M. C.

AU - Chang, C. W.

AU - Kuo, Hao-Chung

AU - Wang, S. C.

AU - Sheu, J. K.

PY - 2004/5

Y1 - 2004/5

N2 - InGaN/GaN multiple quantum wells (MQWs) nanorods with 100 nm in diameter were fabricated by inductively coupled plasma (ICP) etching. The nanorods show large blue-shift in peak photoluminescence emission wavelength compared to that of the bulk emission.

AB - InGaN/GaN multiple quantum wells (MQWs) nanorods with 100 nm in diameter were fabricated by inductively coupled plasma (ICP) etching. The nanorods show large blue-shift in peak photoluminescence emission wavelength compared to that of the bulk emission.

UR - https://www.scopus.com/pages/publications/33645217837

U2 - 10.1364/IQEC.2004.IWA20

DO - 10.1364/IQEC.2004.IWA20

M3 - Conference article

AN - SCOPUS:33645217837

SN - 1094-5695

VL - 97

SP - 607

EP - 608

JO - OSA Trends in Optics and Photonics Series

JF - OSA Trends in Optics and Photonics Series

T2 - International Quantum Electronics Conference, IQEC

Y2 - 21 May 2004 through 26 May 2004

ER -

Fabrication and emission characteristic of InGaN/GaN multiple quantum wells nanorods

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