Fabrication and characterization of T-gate polysilicon thin-film transistors with lightly-doped drain

Cheng Kuei Lee, K. M. Chen, G. W. Huang, Pei Wen Li, Horng Chih Lin

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

We report detailed fabrication and characterization of poly-Si thin-film transistors (TFTs) with T-shaped gate (T-gate) and lightly-doped drain (LDD) structures. The formation of the LDD underneath the wings of a T-gate primarily relies on the shadowing of implanted dopants during the implantation of source and drain. Therefore, the fabrication of LDD structures in our proposed T-gate poly-Si TFTs can save a number of process steps as compared to conventional poly-Si TFTs with LDD structures. Our fabricated T-gated poly-Si TFTs with LDD structures not only exhibit suppressed off-state leakage current but also show a significant improvement in on-state current as compared to that of conventional poly-Si TFTs with the same top-gate dimension.

原文English
文章編號SC1009
期刊Japanese journal of applied physics
62
發行號SC
DOIs
出版狀態Published - 1 4月 2023

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