Fabrication and characterization of novel gate-all-around polycrystalline silicon junctionless field-effect transistors with ultrathin horizontal tube-shape channel

Keyphrases

• Polysilicon 100%
• Ultrathin 100%
• Gate-all-around 100%
• Tube Type 100%
• Junctionless FET 100%
• Horizontal Tube 100%
• Nitrides 66%
• Silicon Tube 66%
• Silicon Nitride 33%
• Fabrication Methods 33%
• Device Characteristics 33%
• Transfer Characteristics 33%
• Hysteresis Loop 33%
• Switching Performance 33%
• Silicon Oxide Layer 33%
• Dynamic Trapping 33%
• Ultra-thin Tubes 33%

Engineering

• Field-Effect Transistor 100%
• Nitride 100%
• Horizontal Tube 100%
• Polysilicon 100%
• Silicon Oxide 33%
• Oxide Layer 33%
• Hysteresis Loop 33%
• Core Layer 33%

Material Science

• Silicon 100%
• Field Effect Transistor 100%
• Nitride Compound 50%
• Silicon Nitride 25%
• Oxide Compound 25%