Fabrication and characterization of novel gate-all-around polycrystalline silicon junctionless field-effect transistors with ultrathin horizontal tube-shape channel

In this paper, we report on a novel fabrication process for the production of junctionless field-effect transistors with an ultrathin polycrystalline silicon (poly-Si) tube channel in a gate-all-around (GAA) configuration. The core of the poly-Si tube channel is filled with either a silicon nitride or a silicon oxide layer, and the effects of the core layers on the device characteristics are evaluated. The devices show excellent switching performance, thanks to the combination of the ultrathin tube channel and the GAA structure. Hysteresis loops in the transfer characteristics of the nitride-core devices are observed, owing to the dynamic trapping of electrons in the nitride core.