Fabrication and characterization of InGaN resonant-cavity light-emitting diodes on silicon substrates

GaN-based resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on Si substrates by a combination of laser lift-off and wafer bonding techniques. The RCLED structure consisted of an In-GaN/GaN multiple-quantum- well active layer between the top (5-pairs) and bottom (7.5-pairs) dielectric TiO₂/SiO₂ distributed Bragg reflector (DBR) with an optical reflectance of 85 and 99.9%, respectively. The cavity mode of the RCLED shows a linewidth of 5.5 nm at a main emission peak at 525 nm. The emission full width at half maximum can decrease from 48 to 35 nm, indicating the effect of the DBR microcavity. The quality factor for this resonant cavity structure was estimated to be approximately 100.