摘要
This letter presents performance comparison between a GaAs/mirror/copper thin-film solar cell and a conventional GaAs solar cell with a thick GaAs substrate. The GaAs thin-film solar cell was fabricated by transferring a GaAs solar cell onto a AuGe/Au mirror-coated copper substrate. With the aid of the excellent copper conductor, the thin-film solar cell exhibits significant improvement in both open-circuit voltage and short-circuit current density. The improved current-voltage (I-V) performance of the thin-film solar cell originates from the following two factors: reduced reverse saturation current by good heat dissipation of copper and enhanced light absorption by the highly reflective AuGe/Au mirror. The role of the mirror can further be verified in the measurement of external quantum efficiency (EQE) response where the thin-film solar cell exhibits a larger EQE response in the wavelength range of 700-900 nm than the conventional GaAs solar cell with the same active absorbing thickness.
原文 | English |
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頁(從 - 到) | 940-942 |
頁數 | 3 |
期刊 | IEEE Electron Device Letters |
卷 | 30 |
發行號 | 9 |
DOIs | |
出版狀態 | Published - 4 8月 2009 |