Fabrication and characterization of field-effect transistors with suspended-nanowire channels

Keyphrases

• Field-effect Transistors 100%
• Nanowire Channel 100%
• Suspended Nanowire 100%
• Hysteresis Characteristics 66%
• Air Gap 33%
• Channel Length 33%
• Pullout 33%
• Subthreshold Swing 33%
• Wet Etch Process 33%
• Voltage Swing 33%
• Cycling Test 33%
• Stiction 33%
• Small Aspect Ratio 33%
• Air Gap Length 33%

Engineering

• Field-Effect Transistor 100%
• Nanowire 100%
• Channel Length 33%
• Etching Process 33%
• Stiction 33%
• Aspect Ratio 33%

Material Science

• Nanowire 100%
• Field Effect Transistor 100%
• Wet Etching 33%