Fabrication and characterization of a novel suspended-nanowire-channel thin-film transistor with nanometer air gap

Chia Wei Hsu*, Chia Hao Kuo, Hsing Hui Hsu, Horng-Chih Lin, Tiao Yuan Huang

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this work, a novel suspended-NW-channel TFT was fabricated and characterized successfully. With the simple and low-cost over-etching-time- controlled RIE technique and a BOE wet etch process, the suspended NWs of 52 nm and an air gap of 100 nm is achieved. It is also found that the fabricated device with longer channel length and S/D extension length reduces the pull-in voltage and the hysteresis window.

原文English
主出版物標題NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems
頁面313-316
頁數4
DOIs
出版狀態Published - 4 十月 2011
事件6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011 - Kaohsiung, Taiwan
持續時間: 20 二月 201123 二月 2011

出版系列

名字NEMS 2011 - 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems

Conference

Conference6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2011
國家/地區Taiwan
城市Kaohsiung
期間20/02/1123/02/11

指紋

深入研究「Fabrication and characterization of a novel suspended-nanowire-channel thin-film transistor with nanometer air gap」主題。共同形成了獨特的指紋。

引用此