Fabrication and characterization of a germanium quantum-dot transistor formed by selective oxidation of SiGe/Si-on-insulator

W. M. Liao*, S. W. Lin, S. S. Tseng, C. K. Lin, M. T. Kuo, Pei-Wen Li

*此作品的通信作者

研究成果: Conference article同行評審

摘要

A simple and CMOS-compatible fabrication method for germanium (Ge) single-electron transistors (SET's) is proposed, in which the Ge quantum dots (QDs) are naturally formed by selective oxidation of Si0.95Ge 0.0.5/Si wires on a silicon-on-insulator substrate. Clear Coulomb-blockade oscillations, Coulomb staircase, and negative differential conductances are experimentally observed at room temperature. The current-voltage characteristics of Ge SET's indicate that the addition energy of Ge QDs is about 130 meV and the Ge QD's diameter is about 7.7 nm, which agrees well with the transmission electron microscopy observation and numerical calculation.

原文English
頁(從 - 到)11-16
頁數6
期刊Materials Research Society Symposium Proceedings
808
出版狀態Published - 2004
事件Amorphous and Nanocrystalline Silicon Science and Technology - 2004 - San Francisco, CA, United States
持續時間: 13 4月 200416 4月 2004

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