Fabrication and characteristics of a GaN-based microcavity laser with shallow etched mesa

Ying Yu Lai, Yu Hsun Chou, Yu Sheng Wu, Yu-Pin Lan, Tien-chang Lu*, Shing Chung Wang

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

In this work, we have developed a simple GaN-based microcavity (MC) with an intracavity shallow etched mesa. The textured GaN-based MC incorporated two high-reflectivity dielectric Bragg mirrors and an InGaN/GaN multiple quantum well with a shallow etched mesa as an optical confined structure. Lasing and transverse optical confinement characteristics have been verified by measuring devices with different mesa diameters. A quality factor (Q) of 2600 and a threshold energy of 30 nJ have been observed in a 10-μm-diameter device. Such a cavity structure could be implanted into electrically pumped GaN vertical-cavity surface-emitting lasers for supporting efficient transverse confinement.

原文English
文章編號062101
期刊Applied Physics Express
7
發行號6
DOIs
出版狀態Published - 6月 2014

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