Fabricating a n+-Ge contact with ultralow specific contact resistivity by introducing a PtGe alloy as a contact metal

C. C. Hsu, C. H. Chou, S. Y. Wang, W. C. Chi, C. H. Chien, G. L. Luo

    研究成果: Article同行評審

    4 引文 斯高帕斯(Scopus)

    摘要

    In this study, we developed an Ohmic contact structure to an in situ n+-Ge film that has an ultralow specific contact resistivity of [(6.8±2.1)×10-Ω· cm2]. This structure was developed by introducing a PtGe alloy as the contact metal. We observed that Ohmic contact behavior can be achieved with several other metals, and the contact resistance is related to the work function of the metal. A physical model of the band diagram was created for the Schottky tunneling width, which can provide insight into the validation and explanation of work function-dependent specific contact resistivity. Dopant segregation at the interface and increased interface roughness induced by the formation of the alloy are crucial in further reducing the specific contact resistivity. As a result, a stable PtGe alloy and high doping concentration in Ge are critical in pursuing a lower contact resistance for a Ge n-channel device.

    原文English
    文章編號113503
    期刊Applied Physics Letters
    107
    發行號11
    DOIs
    出版狀態Published - 14 九月 2015

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