Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure

Kuo-Jui Lin; Shun-Tung Yen; Chien Ping Lee; Der Cherng Liu

doi:10.1109/68.544686

Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure

Kuo-Jui Lin^*, Shun-Tung Yen, Chien Ping Lee, Der Cherng Liu

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

42 引文斯高帕斯（Scopus）

摘要

We report on a very small vertical far-field angle achieved by lasers with a specially designed structure. For an InGaAs-AlGaAs quantum-well laser with a 2.5-μm-wide ridge waveguide, the far-field pattern has a vertical far-field angle of 13° and a lateral far-field angle of 8°. Meanwhile, the threshold current remains acceptably low (≈36 mA for a 500-μm-long cavity). The slope efficiency of the L-I characteristic is high (>0.9 W/A) compared to that of the conventional laser.

原文	English
頁（從 - 到）	1588-1590
頁數	3
期刊	IEEE Photonics Technology Letters
卷	8
發行號	12
DOIs	https://doi.org/10.1109/68.544686
出版狀態	Published - 12月 1996

存取文件

10.1109/68.544686

其它文件與鏈接

Link to publication in Scopus

引用此

@article{a8a3ff1aaecd42e8ab8acdfed04fb868,

title = "Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure",

abstract = "We report on a very small vertical far-field angle achieved by lasers with a specially designed structure. For an InGaAs-AlGaAs quantum-well laser with a 2.5-μm-wide ridge waveguide, the far-field pattern has a vertical far-field angle of 13° and a lateral far-field angle of 8°. Meanwhile, the threshold current remains acceptably low (≈36 mA for a 500-μm-long cavity). The slope efficiency of the L-I characteristic is high (>0.9 W/A) compared to that of the conventional laser.",

author = "Kuo-Jui Lin and Shun-Tung Yen and Lee, {Chien Ping} and Liu, {Der Cherng}",

year = "1996",

month = dec,

doi = "10.1109/68.544686",

language = "English",

volume = "8",

pages = "1588--1590",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure

AU - Lin, Kuo-Jui

AU - Yen, Shun-Tung

AU - Lee, Chien Ping

AU - Liu, Der Cherng

PY - 1996/12

Y1 - 1996/12

N2 - We report on a very small vertical far-field angle achieved by lasers with a specially designed structure. For an InGaAs-AlGaAs quantum-well laser with a 2.5-μm-wide ridge waveguide, the far-field pattern has a vertical far-field angle of 13° and a lateral far-field angle of 8°. Meanwhile, the threshold current remains acceptably low (≈36 mA for a 500-μm-long cavity). The slope efficiency of the L-I characteristic is high (>0.9 W/A) compared to that of the conventional laser.

AB - We report on a very small vertical far-field angle achieved by lasers with a specially designed structure. For an InGaAs-AlGaAs quantum-well laser with a 2.5-μm-wide ridge waveguide, the far-field pattern has a vertical far-field angle of 13° and a lateral far-field angle of 8°. Meanwhile, the threshold current remains acceptably low (≈36 mA for a 500-μm-long cavity). The slope efficiency of the L-I characteristic is high (>0.9 W/A) compared to that of the conventional laser.

UR - http://www.scopus.com/inward/record.url?scp=0030420974&partnerID=8YFLogxK

U2 - 10.1109/68.544686

DO - 10.1109/68.544686

M3 - Article

AN - SCOPUS:0030420974

SN - 1041-1135

VL - 8

SP - 1588

EP - 1590

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

ER -

Extremely small vertical far-field angle of InGaAs-AlGaAs quantum-well lasers with specially designed cladding structure

摘要

存取文件

其它文件與鏈接

指紋

引用此