Extreme ultra-violate exposure induced damages on non-volatile memories

Bing-Yue Tsui*, Chih Chan Yen, Po Hsueh Li, Chih Pei Lu, Jui Yao Lai

*此作品的通信作者

    研究成果: Conference contribution同行評審

    摘要

    The impact of extreme ultra-violate (EUV) exposure induced damages on the characteristics of Si-Oxide-Nitride -Oxide-Si (SONOS) memory and nano-crystal (NC) memory are investigated. In SONOS memory, the erase speed slows down and the endurance degrades severely due to the EUV induced deep-level traps in the dielectric stack and can not recover after 600°C annealing. The NC memory exhibits much better EUV radiation tolerance than the SONOS memory. This work suggests that the EUV lithography could be a potential solution for advanced NC memories without reliability issue.

    原文English
    主出版物標題2010 Silicon Nanoelectronics Workshop, SNW 2010
    DOIs
    出版狀態Published - 22 10月 2010
    事件2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States
    持續時間: 13 6月 201014 6月 2010

    出版系列

    名字2010 Silicon Nanoelectronics Workshop, SNW 2010

    Conference

    Conference2010 15th Silicon Nanoelectronics Workshop, SNW 2010
    國家/地區United States
    城市Honolulu, HI
    期間13/06/1014/06/10

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