@inproceedings{8ca8cb5f89274d8397e58bdc3ae5c898,
title = "Extraction of Ultra-Low Contact Resistivity by End-Resistance Method",
abstract = "Accuracy of extracting ultra-low contact resistivity by the end-resistance method is evaluated. As the contact length becomes smaller than the transfer length, the end-resistance approaches the contact resistance, and the error decreases with the reduction of contact length and contact resistivity. The contact resistivity lower than 10{-9}Ω-\mathrm{c}\mathrm{m}{2} can be extracted with accuracy lower than 3× 10{-10}Ω-\mathrm{c}\mathrm{m}{2}. This end-resistance method is verified by self-aligned transmission line model test structure. Statistic analysis of the distribution of contact resistance and the uniformity of the contact interface are also demonstrated.",
author = "Bing-Yue Tsui and Lee, {Ya Hsin} and Wu, {Dong Ying} and Lee, {Yao Jen} and Li, {Mei Yi}",
year = "2020",
month = may,
doi = "10.1109/ICMTS48187.2020.9107910",
language = "English",
series = "IEEE International Conference on Microelectronic Test Structures",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 IEEE 33rd International Conference on Microelectronic Test Structures, ICMTS 2020 - Proceedings",
address = "美國",
note = "33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020 ; Conference date: 04-05-2020 Through 18-05-2020",
}