Extraction and Simulation with time dependent Vth shift model for IGZO panel

Zhongyuan Wu; Kun Cao; Longyan Wang; Jingwen Yin; Quanhu Li; Yongqian Li; Cuili Gai; Baoxia Zhang; Gang Wang; Scott Lin; Chi Wei Wang; Leon Huang; You Pang Wei; Po-Tsun Liu

doi:10.1002/sdtp.10049

Extraction and Simulation with time dependent V_th shift model for IGZO panel

Zhongyuan Wu, Kun Cao, Longyan Wang, Jingwen Yin, Quanhu Li, Yongqian Li, Cuili Gai, Baoxia Zhang, Gang Wang, Scott Lin, Chi Wei Wang, Leon Huang, You Pang Wei, Po-Tsun Liu

光電工程學系

研究成果: Conference article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

The impact of stress effect to the performance of an IGZO panel is discussed in this paper. Depart from conventional method of observing the threshold voltage (V_th) shift, the time dependency of serial ID-VG test is included in building an accurate V_th shift model. The model can be used to simulate the IGZO TFT current change under fixed bias for aiding the circuit design and optimization.

原文	English
頁（從 - 到）	1184-1187
頁數	4
期刊	Digest of Technical Papers - SID International Symposium
卷	46
發行號	Book 3
DOIs	https://doi.org/10.1002/sdtp.10049
出版狀態	Published - 1 6月 2015
事件	2015 SID International Symposium - San Jose, 美國持續時間: 2 6月 2015 → 3 6月 2015

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10.1002/sdtp.10049

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引用此

@article{76bffde7220a4b089ee082ad4ded3f2f,

title = "Extraction and Simulation with time dependent Vth shift model for IGZO panel",

abstract = "The impact of stress effect to the performance of an IGZO panel is discussed in this paper. Depart from conventional method of observing the threshold voltage (Vth) shift, the time dependency of serial ID-VG test is included in building an accurate Vth shift model. The model can be used to simulate the IGZO TFT current change under fixed bias for aiding the circuit design and optimization.",

keywords = "IGZO TFT, Model, V shift",

author = "Zhongyuan Wu and Kun Cao and Longyan Wang and Jingwen Yin and Quanhu Li and Yongqian Li and Cuili Gai and Baoxia Zhang and Gang Wang and Scott Lin and Wang, {Chi Wei} and Leon Huang and Wei, {You Pang} and Po-Tsun Liu",

year = "2015",

month = jun,

day = "1",

doi = "10.1002/sdtp.10049",

language = "English",

volume = "46",

pages = "1184--1187",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

publisher = "John Wiley and Sons Inc.",

number = "Book 3",

note = "2015 SID International Symposium ; Conference date: 02-06-2015 Through 03-06-2015",

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TY - JOUR

T1 - Extraction and Simulation with time dependent Vth shift model for IGZO panel

AU - Wu, Zhongyuan

AU - Cao, Kun

AU - Wang, Longyan

AU - Yin, Jingwen

AU - Li, Quanhu

AU - Li, Yongqian

AU - Gai, Cuili

AU - Zhang, Baoxia

AU - Wang, Gang

AU - Lin, Scott

AU - Wang, Chi Wei

AU - Huang, Leon

AU - Wei, You Pang

AU - Liu, Po-Tsun

PY - 2015/6/1

Y1 - 2015/6/1

N2 - The impact of stress effect to the performance of an IGZO panel is discussed in this paper. Depart from conventional method of observing the threshold voltage (Vth) shift, the time dependency of serial ID-VG test is included in building an accurate Vth shift model. The model can be used to simulate the IGZO TFT current change under fixed bias for aiding the circuit design and optimization.

AB - The impact of stress effect to the performance of an IGZO panel is discussed in this paper. Depart from conventional method of observing the threshold voltage (Vth) shift, the time dependency of serial ID-VG test is included in building an accurate Vth shift model. The model can be used to simulate the IGZO TFT current change under fixed bias for aiding the circuit design and optimization.

KW - IGZO TFT

KW - Model

KW - V shift

UR - http://www.scopus.com/inward/record.url?scp=84962703385&partnerID=8YFLogxK

U2 - 10.1002/sdtp.10049

DO - 10.1002/sdtp.10049

M3 - Conference article

AN - SCOPUS:84962703385

SN - 0097-966X

VL - 46

SP - 1184

EP - 1187

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - Book 3

T2 - 2015 SID International Symposium

Y2 - 2 June 2015 through 3 June 2015

ER -

Extraction and Simulation with time dependent Vth shift model for IGZO panel

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Extraction and Simulation with time dependent V_th shift model for IGZO panel