Extended microtunnels in GaN prepared by wet chemical etch

Hsin Hsiung Huang*, Hung Yu Zeng, Chi Ling Lee, Shih Chang Lee, Wei-I Lee

*此作品的通信作者

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

It is demonstrated in GaN that microtunnels extended beyond hundreds of microns can be easily achieved using wet chemical etch. To obtain this result, specially designed structures of GaN layers are first grown on sapphire substrates with metal-organic chemical vapor deposition and subsequently with hydride vapor phase epitaxy techniques. The prepared samples are then chemically etched in molten KOH. With the designed structure of GaN layers, extended microtunnels with triangular cross sections are formed. The crystallographic planes of the triangular bevels belong to the {11 2- 2} family. The etch rate of the tunnel can be as high as 10 μmmin at proper etching conditions.

原文English
文章編號202115
期刊Applied Physics Letters
89
發行號20
DOIs
出版狀態Published - 23 11月 2006

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