跳至主導覽
跳至搜尋
跳過主要內容
國立陽明交通大學研發優勢分析平台 首頁
English
中文
首頁
人員
單位
研究成果
計畫
獎項
活動
貴重儀器
影響
按專業知識、姓名或所屬機構搜尋
Exploration and evaluation of TCAM with hybrid tunneling FET and FinFET devices for ultra-low-voltage applications
Meng Hsuan Tu, Yin Nien Chen,
Pin Su
, Ching Te Chuang
研究成果
:
Conference contribution
›
同行評審
1
引文 斯高帕斯(Scopus)
總覽
指紋
指紋
深入研究「Exploration and evaluation of TCAM with hybrid tunneling FET and FinFET devices for ultra-low-voltage applications」主題。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
3D TCAD
33%
Cell Stability
33%
Circuit Simulation
33%
Don't Care
33%
FET Devices
100%
Fin Field-effect Transistor (FinFET)
100%
FinFET Devices
100%
HSPICE
33%
Hybrid Design
33%
Leakage Power
33%
Low Voltage
33%
Low-voltage Application
100%
Match Line
33%
Mixed-mode Simulation
33%
Near-threshold Region
33%
Search Line
33%
Search Performance
33%
Search Time
33%
Stability Switch
33%
Switching Energy
33%
Table-driven
33%
TCAD Simulation
33%
Ternary Content Addressable Memory
100%
Transistor Characteristics
33%
Tunnel FET
100%
Ultra-low Voltage
100%
Verilog
33%
Engineering
Circuit Simulation
100%
Field Effect Transistor
100%
Line Search
100%
Lookup Table
100%
Match Line
100%
Mixed Mode
100%
Simulation Result
100%
Tunnel Construction
100%
Material Science
Electronic Circuit
100%
Field Effect Transistor
100%
Transistor
33%
Computer Science
Circuit Simulation
33%
Mixed-Mode Simulation
33%
ternary content addressable memory
100%
Threshold Region
33%
Verilog
33%