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Exploration and evaluation of TCAM with hybrid tunneling FET and FinFET devices for ultra-low-voltage applications
Meng Hsuan Tu, Yin Nien Chen,
Pin Su
, Ching Te Chuang
研究成果
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Conference contribution
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同行評審
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引文 斯高帕斯(Scopus)
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Keyphrases
Fin Field-effect Transistor (FinFET)
100%
FinFET Devices
100%
Low-voltage Application
100%
Ultra-low Voltage
100%
FET Devices
100%
Tunnel FET
100%
Ternary Content Addressable Memory
100%
Switching Energy
33%
Low Voltage
33%
Circuit Simulation
33%
Table-driven
33%
Leakage Power
33%
Verilog
33%
Mixed-mode Simulation
33%
3D TCAD
33%
TCAD Simulation
33%
HSPICE
33%
Transistor Characteristics
33%
Search Performance
33%
Search Time
33%
Match Line
33%
Search Line
33%
Don't Care
33%
Hybrid Design
33%
Cell Stability
33%
Stability Switch
33%
Near-threshold Region
33%
Engineering
Simulation Result
100%
Field Effect Transistor
100%
Tunnel Construction
100%
Lookup Table
100%
Circuit Simulation
100%
Mixed Mode
100%
Line Search
100%
Match Line
100%
Material Science
Field Effect Transistor
100%
Electronic Circuit
100%
Transistor
33%
Computer Science
ternary content addressable memory
100%
Circuit Simulation
33%
Verilog
33%
Mixed-Mode Simulation
33%
Threshold Region
33%