Exploration and evaluation of low-dropout linear voltage regulator with FinFET, TFET and hybrid TFET-FinFET implementations

Chia Ning Chang, Yin Nien Chen, Po-Tsang Huang, Pin Su, Ching Te Chuang

研究成果: Conference contribution同行評審

8 引文 斯高帕斯(Scopus)

摘要

This paper investigates and evaluates analog and digital low-dropout linear voltage regulators (LDO) with FinFET, TFET and hybrid TFET-FinFET implementations. We utilize Sentaurus physics-based atomistic 3D TCAD mixed-mode simulations for device characteristics and HSPICE with look-up tables based on Verilog-A models calibrated with TCAD simulation results. Frequency response, load regulation and power supply rejection ratio (PSRR) are evaluated for analog LDOs under low, medium and high bias-current conditions. The results indicate that for analog implementations, TFET-LDO and hybrid-LDO provide better loop-gain and PSRR than FinFET-LDO under low and medium operating currents, whereas at higher operating current, FinFET implementation would outperform. As operating voltage is reduced, the performances of analog implementations degrade, and digital implementations become favorable for VIN below around 0.55V. We further show that for digital LDO, all FinFET implementation provides superior performance over all TFET and hybrid TFET-FinFET implementations.

原文English
主出版物標題IEEE International Symposium on Circuits and Systems
主出版物子標題From Dreams to Innovation, ISCAS 2017 - Conference Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781467368520
DOIs
出版狀態Published - 25 9月 2017
事件50th IEEE International Symposium on Circuits and Systems, ISCAS 2017 - Baltimore, 美國
持續時間: 28 5月 201731 5月 2017

出版系列

名字Proceedings - IEEE International Symposium on Circuits and Systems
ISSN(列印)0271-4310

Conference

Conference50th IEEE International Symposium on Circuits and Systems, ISCAS 2017
國家/地區美國
城市Baltimore
期間28/05/1731/05/17

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