Exploiting analogue OxRAM conductance modulation for contrast enhancement application

A. Kumar; S. S. Bezugam; B. Hudec; T. H. Hou; M. Suri

doi:10.1049/el.2020.0106

Exploiting analogue OxRAM conductance modulation for contrast enhancement application

A. Kumar^*
, S. S. Bezugam
, B. Hudec
, T. H. Hou
, M. Suri

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting OxRAM conductance modulation from specific bi-layer OxRAM material stacks. The proposed methodology involves conversion of light intensity to pulse frequency followed by resistance encoding as different non-volatile OxRAM resistance states.

原文	English
頁（從 - 到）	594-597
頁數	4
期刊	Electronics Letters
卷	56
發行號	12
DOIs	https://doi.org/10.1049/el.2020.0106
出版狀態	Published - 11 6月 2020

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10.1049/el.2020.0106

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title = "Exploiting analogue OxRAM conductance modulation for contrast enhancement application",

abstract = "The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting OxRAM conductance modulation from specific bi-layer OxRAM material stacks. The proposed methodology involves conversion of light intensity to pulse frequency followed by resistance encoding as different non-volatile OxRAM resistance states.",

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AU - Kumar, A.

AU - Bezugam, S. S.

AU - Hudec, B.

AU - Hou, T. H.

AU - Suri, M.

PY - 2020/6/11

Y1 - 2020/6/11

N2 - The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting OxRAM conductance modulation from specific bi-layer OxRAM material stacks. The proposed methodology involves conversion of light intensity to pulse frequency followed by resistance encoding as different non-volatile OxRAM resistance states.

AB - The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting OxRAM conductance modulation from specific bi-layer OxRAM material stacks. The proposed methodology involves conversion of light intensity to pulse frequency followed by resistance encoding as different non-volatile OxRAM resistance states.

UR - https://www.scopus.com/pages/publications/85087097004

U2 - 10.1049/el.2020.0106

DO - 10.1049/el.2020.0106

M3 - Article

AN - SCOPUS:85087097004

SN - 0013-5194

VL - 56

SP - 594

EP - 597

JO - Electronics Letters

JF - Electronics Letters

IS - 12

ER -

Exploiting analogue OxRAM conductance modulation for contrast enhancement application

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