Exploiting analogue OxRAM conductance modulation for contrast enhancement application

A. Kumar*, S. S. Bezugam, B. Hudec, T. H. Hou, M. Suri

*此作品的通信作者

研究成果: Article同行評審

摘要

The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting OxRAM conductance modulation from specific bi-layer OxRAM material stacks. The proposed methodology involves conversion of light intensity to pulse frequency followed by resistance encoding as different non-volatile OxRAM resistance states.

原文English
頁(從 - 到)594-597
頁數4
期刊Electronics Letters
56
發行號12
DOIs
出版狀態Published - 11 6月 2020

指紋

深入研究「Exploiting analogue OxRAM conductance modulation for contrast enhancement application」主題。共同形成了獨特的指紋。

引用此