Experimentally effective clean process to C-V characteristic variation reduction of HKMG MOS devices

Chien Hung Chen, Yiming Li, Chieh Yang Chen, Yu Yu Chen, Sheng Chia Hsu, Wen Tsung Huang, Sheng Yuan Chu

    研究成果: Conference contribution同行評審

    摘要

    In this work, the planar HKMG MOS devices are fabricated on (100) wafer with p-substrate. To improve the samples' interface roughness between the Si/Ge film and the interface layer, three different clean treatments are considered to fabricate the MOS devices. Among processes, the experiment indicates that HF and water rinse can present hydrogen termination to bond silicon as a good passivation. The measured C-V curves and HRTEM of the fabricated samples show the interface roughness is improved significantly. The extracted shift of flat band voltage (ΔVfb) and density of interface traps (D it) have around 50% improvement.

    原文English
    主出版物標題2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
    頁面1168-1171
    頁數4
    DOIs
    出版狀態Published - 2013
    事件2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
    持續時間: 5 八月 20138 八月 2013

    出版系列

    名字Proceedings of the IEEE Conference on Nanotechnology
    ISSN(列印)1944-9399
    ISSN(電子)1944-9380

    Conference

    Conference2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
    國家/地區China
    城市Beijing
    期間5/08/138/08/13

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