Experimentally effective clean process to C-V characteristic variation reduction of HKMG MOS devices

Chien Hung Chen, Yiming Li, Chieh Yang Chen, Yu Yu Chen, Sheng Chia Hsu, Wen Tsung Huang, Sheng Yuan Chu

研究成果: Conference contribution同行評審

摘要

In this work, the planar HKMG MOS devices are fabricated on (100) wafer with p-substrate. To improve the samples' interface roughness between the Si/Ge film and the interface layer, three different clean treatments are considered to fabricate the MOS devices. Among processes, the experiment indicates that HF and water rinse can present hydrogen termination to bond silicon as a good passivation. The measured C-V curves and HRTEM of the fabricated samples show the interface roughness is improved significantly. The extracted shift of flat band voltage (ΔVfb) and density of interface traps (D it) have around 50% improvement.

原文English
主出版物標題2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
頁面1168-1171
頁數4
DOIs
出版狀態Published - 2013
事件2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
持續時間: 5 八月 20138 八月 2013

出版系列

名字Proceedings of the IEEE Conference on Nanotechnology
ISSN(列印)1944-9399
ISSN(電子)1944-9380

Conference

Conference2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
國家/地區China
城市Beijing
期間5/08/138/08/13

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