Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFETs with SOI thickness less than 5 nm

Ken Uchida*, Hiroshi Watanabe, Atsuhiro Kinoshita, Junji Koga, Toshinori Numata, Shin Ichi Takagi

*此作品的通信作者

研究成果: Conference article同行評審

308 引文 斯高帕斯(Scopus)

摘要

The electrical characteristics of ultrathin-body SOI CMOSFETs with SOI thickness ranging from 2.3 nm to 8 nm are intensively investigated. As a result, it is demonstrated, for the first time, that electron mobility increases as SOI thickness decreases, when SOI thickness is in the range from 3.5 nm to 4.5 nm. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.

原文English
頁(從 - 到)47-50
頁數4
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 2002
事件2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States
持續時間: 8 12月 200211 12月 2002

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